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| SUD50N03-06P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A)b 84b 59b rDS(on) (W) 0.0065 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation APPLICATIONS D DC/DC Converters D Synchronous Rectifiers D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-06P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C PD TJ, Tstg TC = 25_C TC = 100_C ID IDM IS Symbol VDS VGS Limit 30 "20 84b 59b 100 25 88 8.3a - 55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Based on maximum allowable Junction Temperature, package limitation current is 50 A. Document Number: 71844 S-31268--Rev. B, 16-Jun-03 www.vishay.com t v 10 sec Steady State RthJA RthJC Symbol Typical 15 40 1.4 Maximum 18 50 1.7 Unit _C/W C/W 1 SUD50N03-06P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On State Drain-Source On-State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 20 0.0078 50 0.0053 0.0065 0.0105 0.0095 S W 30 1.0 3.0 "100 1 50 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W VDS = 15 V, VGS = 4.5 V, ID = 50 A VGS = 0 V, VDS = 25 V, f = 1 MHz 3100 565 255 1.9 21 10 7.5 12 12 30 10 20 20 45 15 ns 30 nC W p pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 100 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 35 100 1.5 70 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 200 VGS = 10 thru 6 V 160 I D - Drain Current (A) 5V I D - Drain Current (A) 80 100 Transfer Characteristics 120 60 80 4V 40 TC = 125_C 20 25_C - 55_C 0 40 3V 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71844 S-31268--Rev. B, 16-Jun-03 2 SUD50N03-06P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance 120 TC = - 55_C 25_C 80 125_C 60 r DS(on)- On-Resistance ( W ) 0.0150 On-Resistance vs. Drain Current 100 g fs - Transconductance (S) 0.0125 0.0100 VGS = 4.5 V 0.0075 VGS = 10 V 0.0050 40 20 0.0025 0 0 10 20 30 40 50 0.0000 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Capacitance 4000 3500 3000 2500 2000 1500 1000 Crss 500 0 0 5 10 15 20 25 30 Coss Ciss V GS - Gate-to-Source Voltage (V) 8 VDS = 15 V ID = 50 A 10 Gate Charge C - Capacitance (pF) 6 4 2 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 20 A r DS(on)- On-Resistance ( W ) (Normalized) I S - Source Current (A) 1.5 100 Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C 1.0 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Document Number: 71844 S-31268--Rev. B, 16-Jun-03 www.vishay.com 3 SUD50N03-06P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 30 1000 Limited by rDS(on) 24 I D - Drain Current (A) I D - Drain Current (A) 100 10, 100 ms Safe Operating Area 18 10 1 ms 10 ms 12 1 100 ms 1s 10 s 6 0.1 TA = 25_C Single Pulse 100 s dc 0 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 TA - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 100 www.vishay.com 4 Document Number: 71844 S-31268--Rev. B, 16-Jun-03 |
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